Microcavity III-V lasers monolithically grown on silicon

B. Mayer; S. Mauthe; Y. Baumgartner; S. Wirths; J. Winniger; P. Staudinger; H. Schmid; M. Sousa; L. Czornomaz; K. E. Moselund

doi:10.1117/12.2291735

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26 January 2018 Microcavity III-V lasers monolithically grown on silicon

B. Mayer, S. Mauthe, Y. Baumgartner, S. Wirths, J. Winniger, P. Staudinger, H. Schmid, M. Sousa, L. Czornomaz, K. E. Moselund

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Proceedings Volume 10540, Quantum Sensing and Nano Electronics and Photonics XV; 105401D (2018) https://doi.org/10.1117/12.2291735
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

We will present our recent work on III-V micro-cavity lasers monolithically grown on silicon substrates. The III-V material is directly grown using Template-Assisted-Selective-Epitaxy (TASE) within oxide cavities patterned using conventional lithographic techniques on top of the silicon substrate. This allows for the local integration of single-crystal III-V active gain material. Two variations of this technique will be discussed; the direct growth of disc lasers and the two-step approach via a virtual substrate. Room temperature single-mode optically pumped lasing is achieved in GaAs micro-cavity lasers, and devices show a remarkably low shift of the lasing threshold (T₀=170K) with temperature. Dependence on cavity geometry and pump power will be discussed.

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B. Mayer, S. Mauthe, Y. Baumgartner, S. Wirths, J. Winniger, P. Staudinger, H. Schmid, M. Sousa, L. Czornomaz, and K. E. Moselund "Microcavity III-V lasers monolithically grown on silicon ", Proc. SPIE 10540, Quantum Sensing and Nano Electronics and Photonics XV, 105401D (26 January 2018); https://doi.org/10.1117/12.2291735

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