PROCEEDINGS VOLUME 10543
SPIE OPTO | 27 JANUARY - 1 FEBRUARY 2018
Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV
Proceedings Volume 10543 is from: Logo
SPIE OPTO
27 January - 1 February 2018
San Francisco, California, United States
Front Matter: Volume 10543
Proc. SPIE 10543, Front Matter: Volume 10543, 1054301 (29 June 2018); doi: 10.1117/12.2322683
Nanowire: Lasers and Emitters
Proc. SPIE 10543, Challenges in the monolithic integration and epitaxial gain control of III-V nanowire lasers on silicon (Conference Presentation), 1054302 (14 March 2018); doi: 10.1117/12.2300033
Proc. SPIE 10543, Recent progress in nanowire quantum-dot lasers, 1054303 (21 February 2018); doi: 10.1117/12.2299672
Proc. SPIE 10543, Single-mode lasing in InGaAs nanopillars on SOI (Conference Presentation), 1054304 (14 March 2018); doi: 10.1117/12.2286320
Proc. SPIE 10543, Numerical analysis of nanowire surface recombination using a three-dimensional transient model, 1054306 (21 February 2018); doi: 10.1117/12.2295768
Nanostructures: Growth and Analysis
Proc. SPIE 10543, Photoluminescence investigation for InAs quantum dots capped by GaAs1-xSbx layer with different Sb-composition (Conference Presentation), 1054308 (14 March 2018); doi: 10.1117/12.2290756
Proc. SPIE 10543, Impact of phosphorus ion implantation on the material and optical properties of InAs/GaAs quantum dots, 1054309 (21 February 2018); doi: 10.1117/12.2289543
Proc. SPIE 10543, Electrical characteristics of silicon nanowires solar cells with surface roughness, 105430A (21 February 2018); doi: 10.1117/12.2290906
Nanowires: Growth and Characterization
Proc. SPIE 10543, Fabrication of stable metal halide perovskite nanowire arrays for optoelectronic devices (Conference Presentation), 105430D (14 March 2018); doi: 10.1117/12.2300035
Nanowires: Optoelectronics and Plasmonics
Proc. SPIE 10543, Scalable infrared plasmonics (Conference Presentation), 105430H (14 March 2018); doi: 10.1117/12.2297707
Proc. SPIE 10543, Engineering III-V nanowires for optoelectronics: from epitaxy to terahertz photonics, 105430I (21 February 2018); doi: 10.1117/12.2299831
Proc. SPIE 10543, High-responsivity photodetection using a single p-type GaAs nanowire (Conference Presentation), 105430J (14 March 2018); doi: 10.1117/12.2299472
Quantum Dots: Epitaxy to Application
Proc. SPIE 10543, Droplet etching during semiconductor epitaxy for single and coupled quantum structures, 105430K (21 February 2018); doi: 10.1117/12.2295829
Proc. SPIE 10543, Quantum dot growth on (111) and (110) surfaces using tensile-strained self-assembly, 105430L (21 February 2018); doi: 10.1117/12.2299676
Proc. SPIE 10543, Ultrafast and nonlinear dynamics of InAs/GaAs semiconductor quantum dot lasers, 105430M (21 February 2018); doi: 10.1117/12.2299678
Proc. SPIE 10543, Plasmonic induced transparency in graphene oxide quantum dots, 105430N (21 February 2018); doi: 10.1117/12.2291084
Poster Session
Proc. SPIE 10543, Co-relation of theoretical simulation with experimental results for InAs quantum-dot heterostructures with different capping material, 105430R (21 February 2018); doi: 10.1117/12.2289465
Proc. SPIE 10543, Highly efficient InAs/InGaAs quantum dot-in-a-well heterostructure validated with theoretically simulated model, 105430S (21 February 2018); doi: 10.1117/12.2289486
Proc. SPIE 10543, Effect of various capping layer on the hydrostatic and biaxial strain of InAs QDs in x (100) and z (001) direction, 105430U (21 February 2018); doi: 10.1117/12.2289961
Proc. SPIE 10543, Application of silver nanostructures deposited on silicon in SERS for detection of pyridine, 105430W (2 April 2018); doi: 10.1117/12.2290925
Proc. SPIE 10543, Polymer-coated silicon nanoparticle synthesis for optical applications, 105430X (21 February 2018); doi: 10.1117/12.2292076
Proc. SPIE 10543, Deposition of cadmium sulfide and cadmium selenide thin films using chemical bath deposition technique , 1054310 (21 February 2018); doi: 10.1117/12.2309748
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