21 February 2018 Engineering III-V nanowires for optoelectronics: from epitaxy to terahertz photonics
Author Affiliations +
Nanowires show unique promise as nanoscale building blocks for a multitude of optoelectronic devices, ranging from solar cells to terahertz photonic devices. We will discuss the epitaxial growth of these nanowires in novel geometries and crystallographic phases, and the use of terahertz conductivity spectroscopy to guide the development of nanowire-based devices. As an example, we will focus on the development of nanowire-based polarization modulators for terahertz communications systems.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hannah J. Joyce, Hannah J. Joyce, Chawit Uswachoke, Chawit Uswachoke, Sarwat A. Baig, Sarwat A. Baig, Stephanie O. Adeyemo, Stephanie O. Adeyemo, Jessica L. Boland, Jessica L. Boland, Djamshid A. Damry, Djamshid A. Damry, Christopher L. Davies, Christopher L. Davies, Jennifer Wong-Leung, Jennifer Wong-Leung, H. Hoe Tan, H. Hoe Tan, C. Jagadish, C. Jagadish, Laura M. Herz, Laura M. Herz, Michael B. Johnston, Michael B. Johnston, "Engineering III-V nanowires for optoelectronics: from epitaxy to terahertz photonics", Proc. SPIE 10543, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV, 105430I (21 February 2018); doi: 10.1117/12.2299831; https://doi.org/10.1117/12.2299831

Back to Top