Ultrafast and nonlinear dynamics of InAs/GaAs semiconductor quantum dot lasers

Frédéric Grillot; D. Arsenijevic; H. Huang; D. Bimberg

doi:10.1117/12.2299678

21 February 2018 Ultrafast and nonlinear dynamics of InAs/GaAs semiconductor quantum dot lasers

Frédéric Grillot; D. Arsenijevic; H. Huang; D. Bimberg

Author Affiliations +

Proceedings Volume 10543, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV; 105430M (2018) https://doi.org/10.1117/12.2299678
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

Quantum dot nanostructures are one of the best practical examples of emerging nanotechnologies hence offering superior properties as compared to their quantum well counterparts. InAs/GaAs quantum dots allow producing energy- and cost-efficient devices with outstanding temperature stability, lowest threshold current, ultrafast gain dynamics, and low amplified spontaneous emission. This paper reports on the recent achievements in ultrafast and nonlinear dynamics properties of InAs/GaAs quantum dot lasers for radar systems, wireless communications and high-speed optical communications. Passive mode-locking is shown to exhibit a great potential for microwave, millimeter-wave and Terahertz signal generation with high repetition frequency tuning and jitter reduction. The optical feedback is also used to stabilize the pulse emission leading an integrated timing jitter as low as 90 fs without consuming additional power. Lastly, multimode optical feedback dynamics of InAs/GaAs QD lasers emitting on different lasing states is also studied. In particular, a chaos free operation is observed for the first time from the ground state lasing operation.

Conference Presentation

Citation Download Citation

Frédéric Grillot, D. Arsenijevic, H. Huang, D. Bimberg, "Ultrafast and nonlinear dynamics of InAs/GaAs semiconductor quantum dot lasers", Proc. SPIE 10543, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV, 105430M (21 February 2018); doi: 10.1117/12.2299678; https://doi.org/10.1117/12.2299678

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