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5 July 1989 Optical, Electrical And Structural Properties Of Composite Films Made Of Si, Ge And C
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Abstract
The properties of thin films made of alloys of Si, Ge, and C are investigated with Raman spectroscopy and other, mostly non-optical, techniques. The focus is on the relationship between structural, electronic. and optical properties. Three topics are investigated: the microcrystallinity in A thick (> 1000 Å) doped SiC films, the influence of the substrate on the properties of thin (< 1000 Å ) films, and possible heterogeneities in SiGe alloys. This study is the first step towards a better understanding of the relationship between the growth parameters and the electronic and optical properties that are useful in devices.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Philippe M. Fauchet and Ian H. Campbell "Optical, Electrical And Structural Properties Of Composite Films Made Of Si, Ge And C", Proc. SPIE 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology, (5 July 1989); https://doi.org/10.1117/12.951590
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