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5 July 1989 Raman Scattering From Collective And Localized Excitations In Diluted Magnetic Semiconductors
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Abstract
Raman spectroscopy provides powerful insights into the novel physical properties of the tetrahedrally coordinated diluted magnetic semiconductors, the II-VI semiconductors with group II ions randomly replaced with transition metal ions like Mn2+, Co2+ or Fe2+. The technique is equally fruitful in the context of the special issues which arise in epilayers and superlattices of these semiconductors.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. K. Ramdas and S. Rodriguez "Raman Scattering From Collective And Localized Excitations In Diluted Magnetic Semiconductors", Proc. SPIE 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology, (5 July 1989); doi: 10.1117/12.951570; https://doi.org/10.1117/12.951570
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