19 February 2018 The influence of the VCSEL design on its electrical modulation properties
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Abstract
Here we investigate the influence of the p- and n-oxide-aperture radii in all-semiconductor GaAs-based verticalcavity surface-emitting lasers (VCSELs), designed for 980 nm, on the modulation time constant (τ). Our analysis shows that the minimum value of τ is obtained if the oxide layers on both sides of the junction have identical depths. The simulations of the number of oxide layers on both p- and n-type sides reveal that double p- and n-oxidations are the most effective in the reduction of the modulation time constant as compared to single oxide layers.
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Paulina Komar, Patrycja Śpiewak, Marcin Gębski, Ricardo Rosales, Luca Sulmoni, Magdalena Marciniak, Tomasz Czyszanowski, James A. Lott, Michał Wasiak, "The influence of the VCSEL design on its electrical modulation properties", Proc. SPIE 10552, Vertical-Cavity Surface-Emitting Lasers XXII, 105520M (19 February 2018); doi: 10.1117/12.2289582; https://doi.org/10.1117/12.2289582
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