19 February 2018 Impact of the top DBR in GaAs-based VCSELs on the threshold current and the cavity photon lifetime
Author Affiliations +
Abstract
This paper presents results of numerical simulations of a GaAs-based vertical-cavity surface-emitting laser, emitting at 980 nm. These simulations concern the influence of the number of top DBR pairs on the laser’s threshold parameters, as well as the optical loses in the cavity. Moreover, electrical parameters such as the device’s resistance and its capacitance-related temporal characteristics are analyzed as functions of the thickness of the top DBR. The simulations suggest that there is a possibility of a significant reduction in the number of pairs in the top DBR that can be beneficial in certain applications.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrycja Śpiewak, Marcin Gębski, Nasibeh Haghighi, Ricardo Rosales, Paulina Komar, Jarosław Walczak, Marta Więckowska, Robert P. Sarzała, James A. Lott, Michał Wasiak, "Impact of the top DBR in GaAs-based VCSELs on the threshold current and the cavity photon lifetime", Proc. SPIE 10552, Vertical-Cavity Surface-Emitting Lasers XXII, 105520O (19 February 2018); doi: 10.1117/12.2289939; https://doi.org/10.1117/12.2289939
PROCEEDINGS
8 PAGES


SHARE
Back to Top