19 February 2018 New GasB-based single-mode diode lasers in the NIR and MIR spectral regime for sensor applications
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Abstract
The NIR/MIR region between 1.8μm and 3.5μm contains important absorption lines for gas detection. State of the art are InP laser based setups, which show poor gain above 1.8μm and cannot be applied beyond 2.1μm. GaSb laser show a significantly higher output power (100mW for Fabry-Perot, 30mW for DFB). The laser design is presented with simulation and actual performance data. The superior performance of the GaSb lasers is verified in gas sensing applications. TDLAS and QEPAS measurements at trace gases like CH4, CO2 and N2O are shown to prove the spectroscopy performance.
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Tobias Milde, Tobias Milde, Morten Hoppe, Morten Hoppe, Herve Tatenguem, Herve Tatenguem, Martin Honsberg, Martin Honsberg, Mario Mordmüller, Mario Mordmüller, James O’Gorman, James O’Gorman, Wolfgang Schade, Wolfgang Schade, Joachim Sacher, Joachim Sacher, } "New GasB-based single-mode diode lasers in the NIR and MIR spectral regime for sensor applications", Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, 105530C (19 February 2018); doi: 10.1117/12.2287702; https://doi.org/10.1117/12.2287702
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