19 February 2018 Influence of different approaches for dynamical performance optimization of monolithic passive colliding-pulse mode-locked laser diodes emitting around 850 nm
Author Affiliations +
Abstract
Monolithic laser diodes which generate short infrared pulses in the picosecond and sub-picosecond ranges with high peak power are ideal sources for many applications like e.g. THz-time-domain spectroscopy (TDS) scanning systems. The achievable THz bandwidth is limited by the length of the optical pulses. Due to the fact that colliding-pulse mode locking (CPM) leads to the shortest pulses which could reached by passive mode locking, we experimentally investigated in detail the dynamical and electro optical performance of InGaAsP based quantum well CPM laser diodes with well-established vertical layer structures. Simple design modifications whose implementation is technically easy were realized. Improvements of the device performance in terms of pulse duration, output power, and noise properties are presented in dependence on the different adaptions. From the results we extract an optimized configuration with which we have reached pulses with durations of ≈1.5 ps, a peak power of > 1 W and a pulse-to-pulse timing jitter < 200 fs. The laser diodes emit pulses at a wavelength around 850 nm with a repetition frequency of ≈ 12.4 GHz and could be used as pump source for GaAs antennas to generate THz-radiation. Approaches for reducing pulse width, increasing output power, and improving noise performance are described.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Prziwarka, T. Prziwarka, A. Klehr, A. Klehr, H. Wenzel, H. Wenzel, J. Fricke, J. Fricke, F. Bugge, F. Bugge, M. Weyers, M. Weyers, A. Knigge, A. Knigge, G. Tränkle, G. Tränkle, } "Influence of different approaches for dynamical performance optimization of monolithic passive colliding-pulse mode-locked laser diodes emitting around 850 nm", Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, 105530M (19 February 2018); doi: 10.1117/12.2289936; https://doi.org/10.1117/12.2289936
PROCEEDINGS
14 PAGES


SHARE
RELATED CONTENT


Back to Top