19 February 2018 Passive mode-locking of 3.25μm GaSb-based type-I quantum-well cascade diode lasers
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Abstract
Passively mode-locked type-I quantum well cascade diode lasers emitting in the methane absorption band near 3.25 μm were designed, fabricated and characterized. The deep etched ~5.5-μm-wide single spatial mode ridge waveguide design utilizing split-contact architecture was implemented. The devices with absorber to gain section length ratios of 11% and 5.5% were studied. Lasers with the longer absorber section (~300 μm) generated smooth bell-shape-like emission spectrum with about 30 lasing modes at full-width-at-half-maximum level. Devices with reverse biased absorber section demonstrated stable radio frequency beat with nearly perfect Lorentzian shape over four orders of magnitude of intensity. The estimated pulse-to-pulse timing jitter was about 110 fs/cycle. Laser generated average power of more than 1 mW in mode-locked regime.
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Tao Feng, Leon Shterengas, Gela Kipshidze, Takashi Hosoda, Meng Wang, Gregory Belenky, "Passive mode-locking of 3.25μm GaSb-based type-I quantum-well cascade diode lasers", Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, 1055319 (19 February 2018); doi: 10.1117/12.2287463; https://doi.org/10.1117/12.2287463
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