19 February 2018 Passive mode-locking of 3.25μm GaSb-based type-I quantum-well cascade diode lasers
Author Affiliations +
Passively mode-locked type-I quantum well cascade diode lasers emitting in the methane absorption band near 3.25 μm were designed, fabricated and characterized. The deep etched ~5.5-μm-wide single spatial mode ridge waveguide design utilizing split-contact architecture was implemented. The devices with absorber to gain section length ratios of 11% and 5.5% were studied. Lasers with the longer absorber section (~300 μm) generated smooth bell-shape-like emission spectrum with about 30 lasing modes at full-width-at-half-maximum level. Devices with reverse biased absorber section demonstrated stable radio frequency beat with nearly perfect Lorentzian shape over four orders of magnitude of intensity. The estimated pulse-to-pulse timing jitter was about 110 fs/cycle. Laser generated average power of more than 1 mW in mode-locked regime.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tao Feng, Tao Feng, Leon Shterengas, Leon Shterengas, Gela Kipshidze, Gela Kipshidze, Takashi Hosoda, Takashi Hosoda, Meng Wang, Meng Wang, Gregory Belenky, Gregory Belenky, } "Passive mode-locking of 3.25μm GaSb-based type-I quantum-well cascade diode lasers", Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, 1055319 (19 February 2018); doi: 10.1117/12.2287463; https://doi.org/10.1117/12.2287463


Octave-spanning THz quantum cascade laser
Proceedings of SPIE (February 08 2015)
Review of high power frequency comb sources based on InP...
Proceedings of SPIE (September 14 2018)
GaSb based lasers for spectra region 2 4 µm ...
Proceedings of SPIE (March 25 2005)
High-power CW mid-IR quantum cascade lasers
Proceedings of SPIE (March 25 2005)
Coherence and beam shaping in quantum cascade lasers
Proceedings of SPIE (February 03 2009)

Back to Top