14 February 2018 High efficiency GaN-based near UV light emitting diodes with asymmetric triangular multiple quantum wells
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Abstract
Near-ultraviolet (NUV) light-emitting diodes (LEDs) have found many applications in the areas such as UV curing, bio-chemical sensors etc. However, the internal quantum efficiency (IQE) of NUV-LEDs show relatively lower value than blue LEDs. In previous research, asymmetric triangular MQWs with gallium face-oriented inclination in the blue wavelength band are demonstrated to have higher emission efficiency and lower efficiency droop. In this study, we surprisingly found different trend in NUV-LEDs. Compared to blue LEDs, NUV-LEDs tend to have shallower quantum wells and less ability to localize holes. In the simulation results, holes are more confined within nitrogen face-oriented inclination than that in MQWs with gallium face-oriented inclination and the IQE are improved about 10%.
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Heng Li, Heng Li, Chia-Jui Chang, Chia-Jui Chang, Shiou-Yi Kuo, Shiou-Yi Kuo, Jun-Rong Chen, Jun-Rong Chen, Tien-Chang Lu, Tien-Chang Lu, } "High efficiency GaN-based near UV light emitting diodes with asymmetric triangular multiple quantum wells", Proc. SPIE 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, 105540J (14 February 2018); doi: 10.1117/12.2289389; https://doi.org/10.1117/12.2289389
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