14 February 2018 InGaN quantum nanodisks in nanopillars fabricated by dry etching of InGaN/GaN MQWs
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Abstract
While quantum heterostructures are typically achieved via growth, here in this paper we would like to demonstrate InGaN quantum nanodisks in nanopillars fabricated by dry etching of InGaN/GaN MQWs. The fabricated quantum nanodisks of sub-30 nm dimension are investigated using micro-photoluminescence measurements and time-resolved photoluminescence studies. Changes in quantum confinement have been successfully demonstrated by microphotoluminescence studies with a reduction of the PL bandwidth of over 54% after fabrication of the quantum nanodisks. The quantum confinement effect of the nanodisk is further verified using TRPL measurement, which demonstrated a reduction of over 80% of TRPL lifetime. The reduction in lifetime implies an increase in radiative recombination rate and thus better quantum efficiencies.
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W. Y. Fu, H. W. Choi, "InGaN quantum nanodisks in nanopillars fabricated by dry etching of InGaN/GaN MQWs", Proc. SPIE 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, 105540U (14 February 2018); doi: 10.1117/12.2289572; https://doi.org/10.1117/12.2289572
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