We adapt the hyperspectral imaging technique for detecting the spatially-resolved electroluminescence of GaNbased light-emitting diodes. Featuring a hyperspectral camera and a microscope, this microscopic-hyperspectral imaging (MHI) capture the image of chip surface within single exposure. Each pixel of MHI image contains the EL spectrum over the visible range, instead of mere RGB intensities as images of regular cameras do. The spatially-resolved EL information can be further processed into multiple representations, e.g. mappings of intensity, peak energy, etc., which allow us to analysis the lateral variations in the key optical parameters from different aspects. In this work, we present a demo of the application of MHI on LED measurement. For GaN green LEDs which are being subjected to high-current stress, we take the MHI images on several aging stages. The evolutions on the EL mappings recover the changes in injection lateral distributions, a possible result of the persistent interplay between carriers and crystalline imperfections. The spatially-resolved EL mapping provides a new tool for studying the carrier-lattice dynamics, as a promising complement to the current optical characterization.