15 February 2018 Thermocompression bonding for high-power-UV LEDs
Author Affiliations +
UV LEDs are usually mounted in flip-chip technology by soldering or thermocompression bonding to allow the UV light to be emitted through the sapphire substrate. The thermal conductivity of solders is considerably smaller than that of the typical metals used for packaging such as Cu, Ag or Au. For thermosonic- or thermocompression bonding pure metals can be used, however, the contact area is reduced in comparison to soldered contacts. Thermal simulations with different ratios of the number and size of stud bumps to the total area illustrate the direct influence of these parameters on the thermal resistance. The deformation during the bonding process as a function of the processing temperature and the applied force is discussed together with the influence of preprocessing, e.g. coining. Approaches are presented to increase the bonding area to 70 % of the total pad area of the chip. The improvements in the thermal resistance are demonstrated by lock-in-thermography and SEM investigations.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Indira Kaepplinger, Indira Kaepplinger, Dominik Karolewski, Dominik Karolewski, Geert Brockmann, Geert Brockmann, Thomas Ortlepp, Thomas Ortlepp, Olaf Brodersen, Olaf Brodersen, Andreas Thies, Andreas Thies, Jens Rass, Jens Rass, Sven Einfeldt, Sven Einfeldt, Neysha Lobo-Ploch, Neysha Lobo-Ploch, Christoph Stoelmacker, Christoph Stoelmacker, Frank Schnieder, Frank Schnieder, } "Thermocompression bonding for high-power-UV LEDs ", Proc. SPIE 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, 105541B (15 February 2018); doi: 10.1117/12.2287720; https://doi.org/10.1117/12.2287720


GaN based light emitting diodes by laser lift off with...
Proceedings of SPIE (September 19 2013)
VLED for Si wafer-level packaging
Proceedings of SPIE (February 27 2012)
A novel patterning method of low-resistivity metals
Proceedings of SPIE (May 04 2005)
Studies and issues of thin-GaN LED process
Proceedings of SPIE (September 19 2007)

Back to Top