14 February 2018 Room temperature photoluminescence spectrum from β-FeSi2 films
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Abstract
Luminescent epitaxial β-FeSi2 films were grown on the Ag-layer pre-coated Si(111) substrates by metal-organic chemical vapor deposition method. These epitaxial β-FeSi2 films had (101)/(110)-preferred orientation and were constructed with a triple-domain structure. The photoluminescence intensity of this (101)/(110)-orientated epitaxial β-FeSi2 films grown at 700°C was larger than that of β-FeSi2 films at the other deposition temperature, indicating the decreasing of the density of non-radiative recombination centers in β-FeSi2 film. The thermal equilibrium Si vacancy is considered to act as the non-radiative recombination centers in β-FeSi2.
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Kensuke Akiyama, Kensuke Akiyama, Yoshihisa Matsumoto, Yoshihisa Matsumoto, Hiroshi Funakubo, Hiroshi Funakubo, } "Room temperature photoluminescence spectrum from β-FeSi2 films", Proc. SPIE 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, 105541N (14 February 2018); doi: 10.1117/12.2289984; https://doi.org/10.1117/12.2289984
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