15 August 1989 Reactions Of Photogenerated Neutral Free Radicals At Semiconductor Surfaces
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Proceedings Volume 1056, Photochemistry in Thin Films; (1989) https://doi.org/10.1117/12.951633
Event: OE/LASE '89, 1989, Los Angeles, CA, United States
The reactions of fluorocarbon free radicals on silicon and silicon oxide surfaces have been studied by producing the reactive species using laser photodissociation, and examining the resulting surface compositions using in situ electron spectroscopy. The reactivities of these and other fluorinating species can be explained by means of a simple thermochemical model which takes account only of chemical bonds made and broken at the surface of the material. The photochemical processes which take place in surface films directly exposed to laser irradiation remain to be established.
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Jeffrey I. Steinfeld, J A Shorter, J. Langan, Xu Xin, "Reactions Of Photogenerated Neutral Free Radicals At Semiconductor Surfaces", Proc. SPIE 1056, Photochemistry in Thin Films, (15 August 1989); doi: 10.1117/12.951633; https://doi.org/10.1117/12.951633

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