Proceedings Volume 10583 is from: Logo
SPIE ADVANCED LITHOGRAPHY
25 February - 1 March 2018
San Jose, California, United States
Front Matter: Volume 10583
Proc. SPIE 10583, Front Matter: Volume 10583, 1058301 (8 May 2018); doi: 10.1117/12.2325181
Plenary Presentations
Proc. SPIE 10583, Moore's law, lithography, and how optics drive the semiconductor industry, 1058303 (19 March 2018); doi: 10.1117/12.2308299
Keynote Session
Proc. SPIE 10583, EUV photolithography: resist progress and challenges, 1058306 (19 March 2018); doi: 10.1117/12.2302759
EUV: Resist Processes: Joint session with conferences 10583 and 10586
Proc. SPIE 10583, Sensitizers in EUV chemically amplified resist: mechanism of sensitivity improvement, 1058307 (19 March 2018); doi: 10.1117/12.2297627
Proc. SPIE 10583, Multi-trigger resist patterning with ASML NXE3300 EUV scanner, 1058308 (19 March 2018); doi: 10.1117/12.2297402
EUV: Metal-based Resists: Joint session with conferences 10583 and 10586
Proc. SPIE 10583, Role of excess ligand and effect of thermal treatment in hybrid inorganic-organic EUV resists, 1058309 (19 March 2018); doi: 10.1117/12.2300064
Proc. SPIE 10583, Ti, Zr, and Hf-based molecular hybrid materials as EUV photoresists, 105830A (19 March 2018); doi: 10.1117/12.2297167
Proc. SPIE 10583, Recent status of resist outgas testing for metal containing resists at EIDEC, 105830B (19 March 2018); doi: 10.1117/12.2297317
EUV Patterning I
Proc. SPIE 10583, EPE fundamentals and impact of EUV: Will traditional design-rule calculations work in the era of EUV?, 105830C (30 March 2018); doi: 10.1117/12.2297459
Proc. SPIE 10583, Holistic analysis of aberration induced overlay error in EUV lithography, 105830D (19 March 2018); doi: 10.1117/12.2297027
Proc. SPIE 10583, Defect detection strategies and process partitioning for SE EUV patterning, 105830E (28 March 2018); doi: 10.1117/12.2297362
Proc. SPIE 10583, Characterization and control of EUV scanner dose uniformity and stability, 105830F (4 April 2018); doi: 10.1117/12.2297419
Proc. SPIE 10583, EUV photoresist patterning characterization for imec N7/N5 technology, 105830G (19 March 2018); doi: 10.1117/12.2299504
Proc. SPIE 10583, EUV for HVM: towards an industrialized scanner for HVM NXE3400B performance update, 105830H (19 March 2018); doi: 10.1117/12.2299503
EUV Patterning II
Proc. SPIE 10583, EUV vote-taking lithography: crazy... or not?, 105830I (19 March 2018); doi: 10.1117/12.2299509
Proc. SPIE 10583, Evaluation of EUV mask impacts on wafer line-edge roughness using aerial and SEM image analyses, 105830J (27 March 2018); doi: 10.1117/12.2297364
Proc. SPIE 10583, Comparative stochastic process variation bands for N7, N5, and N3 at EUV, 105830K (19 March 2018); doi: 10.1117/12.2299825
Proc. SPIE 10583, Single exposure EUV of 32nm pitch logic structures: patterning performance on BF and DF masks, 105830L (21 March 2018); doi: 10.1117/12.2299639
Proc. SPIE 10583, DDR process and materials for novel tone reverse technique, 105830M (19 March 2018); doi: 10.1117/12.2297517
RET I
Proc. SPIE 10583, SRAF requirements, relevance, and impact on EUV lithography for next-generation beyond 7nm node, 105830N (19 March 2018); doi: 10.1117/12.2297410
Proc. SPIE 10583, Double patterning at NA 0.33 versus high-NA single exposure in EUV lithography: an imaging comparison, 105830O (19 March 2018); doi: 10.1117/12.2297677
Proc. SPIE 10583, Model based high NA anamorphic EUV RET , 105830P (19 March 2018); doi: 10.1117/12.2299668
Proc. SPIE 10583, Impact of aberrations in EUV lithography: metal to via edge placement control, 105830Q (19 March 2018); doi: 10.1117/12.2299872
EUV Optics
Proc. SPIE 10583, The future of EUV lithography: continuing Moore's Law into the next decade, 105830R (19 March 2018); doi: 10.1117/12.2295800
Proc. SPIE 10583, Diffuser concepts for in-situ wavefront measurements of EUV projection optics, 105830S (19 March 2018); doi: 10.1117/12.2297433
Proc. SPIE 10583, Speckle metrology for extreme ultra-violet lithography, 105830T (1 June 2018); doi: 10.1117/12.2299605
Patterning and Etch for EUV: Joint session with conferences 10583 and 10589
Proc. SPIE 10583, Electrical comparison of iN7 EUV hybrid and EUV single patterning BEOL metal layers, 105830U (23 March 2018); doi: 10.1117/12.2299389
Proc. SPIE 10583, Inorganic hardmask development for EUV patterning, 105830V (19 March 2018); doi: 10.1117/12.2296751
RET II
Proc. SPIE 10583, Self-aligned block and fully self-aligned via for iN5 metal 2 self-aligned quadruple patterning, 105830W (19 March 2018); doi: 10.1117/12.2298761
Proc. SPIE 10583, EUV contact-hole local CD uniformity optimization for DRAM storage node application, 105830X (1 May 2018); doi: 10.1117/12.2299322
Proc. SPIE 10583, Illumination source optimization in EUV lithography for staggered contact holes and pillars for DRAM applications, 105830Y (2 May 2018); doi: 10.1117/12.2299598
Proc. SPIE 10583, A comparison of different methods of characterizing EUV photoresist shrinkage, 105830Z (19 March 2018); doi: 10.1117/12.2297695
EUV Mask
Proc. SPIE 10583, EUV mask lifetime testing using EBL2, 1058310 (19 March 2018); doi: 10.1117/12.2297369
Proc. SPIE 10583, Aerial image based metrology of EUV masks: recent achievements, status, and outlook for the AIMS EUV platform, 1058311 (19 March 2018); doi: 10.1117/12.2297681
Proc. SPIE 10583, Attenuated PSM for EUV: Can they mitigate 3D mask effects?, 1058312 (19 March 2018); doi: 10.1117/12.2299648
Proc. SPIE 10583, EUVL back-insertion layout optimization, 1058313 (19 March 2018); doi: 10.1117/12.2297122
Proc. SPIE 10583, Impact of EUV mask absorber sidewall angle on patterning robustness, 1058314 (19 March 2018); doi: 10.1117/12.2296865
Special Session: Three Points on Shot Noise, 100 Years Later
Proc. SPIE 10583, Shot noise: A 100 year history, with applications to lithography, 1058315 (22 May 2018); doi: 10.1117/12.2305949
EUV Source
Proc. SPIE 10583, High-power LPP-EUV source with long collector mirror lifetime for high volume semiconductor manufacturing, 1058318 (19 March 2018); doi: 10.1117/12.2299300
Proc. SPIE 10583, Increasing EUV source efficiency via recycling of radiation power, 1058319 (19 March 2018); doi: 10.1117/12.2297254
Proc. SPIE 10583, Study of Sn removal by surface wave plasma for source cleaning (Conference Presentation), 105831A (19 March 2018); doi: 10.1117/12.2297458
Proc. SPIE 10583, Modeling of emission of particle debris from ablation of the tin target for the laser produced plasma extreme ultra-violet light source (Conference Presentation), 105831B (19 March 2018); doi: 10.1117/12.2297306
Proc. SPIE 10583, A tabletop coherent EUV source for commercial EUVL metrology and imaging applications, 105831C (19 March 2018); doi: 10.1117/12.2297507
Proc. SPIE 10583, Effects of chamber conditions on EUV source efficiency and optical system performance during high-frequency operation, 105831D (19 March 2018); doi: 10.1117/12.2297423
EUV Mask Defectivity
Proc. SPIE 10583, CNTs in the context of EUV pellicle history, 105831E (23 April 2018); doi: 10.1117/12.2297710
Proc. SPIE 10583, Printability estimation of EUV blank defect using actinic image, 105831F (19 March 2018); doi: 10.1117/12.2297503
Proc. SPIE 10583, Actinic EUV scatterometry for parametric mask quantification, 105831G (19 March 2018); doi: 10.1117/12.2299271
Proc. SPIE 10583, A comparative study of EUV absorber materials using lensless actinic imaging of EUV photomasks, 105831H (20 March 2018); doi: 10.1117/12.2297381
Proc. SPIE 10583, Through-pellicle inspection of EUV masks, 105831I (19 March 2018); doi: 10.1117/12.2297436
EUV Resist Roughness
Proc. SPIE 10583, Population statistics of EUV printed MOx resist features (Conference Presentation), 105831J (19 March 2018); doi: 10.1117/12.2299968
Proc. SPIE 10583, Stochastic effects in EUV lithography, 105831K (19 March 2018); doi: 10.1117/12.2300541
Proc. SPIE 10583, High-resolution EUV lithography using a multi-trigger resist, 105831L (19 March 2018); doi: 10.1117/12.2297406