EUV Patterning I
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EPE fundamentals and impact of EUV: Will traditional design-rule calculations work in the era of EUV?
Double patterning at NA 0.33 versus high-NA single exposure in EUV lithography: an imaging comparison
Illumination source optimization in EUV lithography for staggered contact holes and pillars for DRAM applications
Aerial image based metrology of EUV masks: recent achievements, status, and outlook for the AIMS EUV platform
High-power LPP-EUV source with long collector mirror lifetime for high volume semiconductor manufacturing
Modeling of emission of particle debris from ablation of the tin target for the laser produced plasma extreme ultra-violet light source (Conference Presentation)
Effects of chamber conditions on EUV source efficiency and optical system performance during high-frequency operation
Systematic assessment of the contributors of line edge roughness in EUV lithography using simulations
Sensitization and reaction mechanisms of ZrO2 nanoparticle resist used for extreme ultraviolet lithography (Conference Presentation)
Evaluation of high-resolution and sensitivity of n-CAR hybrid resist for sub-16nm or below technology node
Extreme ultraviolet mask multilayer material variation impact on horizontal to vertical pattern bias
Low-stress and high-reflectance Mo/Si multilayers for EUVL by magnetron sputtering deposition with bias assistance
EUVL Gen 2.0: key requirements for constraining semiconductor cost in advanced technology node manufacturing
Industrialization of a robust EUV source for high-volume manufacturing and power scaling beyond 250W