We present the lithography performance of the MTR1 resist series in two formulations – a high-speed baseline, and a formulation designed to enhance the multi-trigger behaviour. Additionally, we present results for the MTR2 resist series, which has been designed for lower line edge roughness. The high-speed baseline resist (MTR1), showed 18 nm resolution at 20mJ/cm2. The MTR2 resist shows 16nm half pitch lines patterned with a dose of 38mJ/cm2, giving a LER of 3.7 nm. Performance across multiple process conditions are discussed. We performed etch rate measurement and the multi-trigger resist showed etch resistance equivalent or better than standard chemically amplified resist. This could compensate for the lower film thickness required to avoid pattern collapse at pitch 32nm.
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Yannick Vesters, Alexandra McClelland, Danilo De Simone, Carmen Popescu, Guy Dawson, John Roth, Wolfgang Theis, Geert Vandenberghe, Alex P. G. Robinson, "Multi-trigger resist patterning with ASML NXE3300 EUV scanner," Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 1058308 (19 March 2018);