19 March 2018 Multi-trigger resist patterning with ASML NXE3300 EUV scanner
Author Affiliations +
Irresistible Materials (IM) is developing novel resist systems based on the multi-trigger concept, which incorporates a dose dependent quenching-like behaviour. The Multi Trigger Resist (MTR) is a negative tone crosslinking resist that does not need a post exposure bake (PEB), and during the past years, has been mainly tested using interference lithography at PSI. In this study, we present the results that have been obtained using MTR resists, performing EUV exposures on ASML NXE3300B EUV scanner at IMEC.

We present the lithography performance of the MTR1 resist series in two formulations – a high-speed baseline, and a formulation designed to enhance the multi-trigger behaviour. Additionally, we present results for the MTR2 resist series, which has been designed for lower line edge roughness. The high-speed baseline resist (MTR1), showed 18 nm resolution at 20mJ/cm2. The MTR2 resist shows 16nm half pitch lines patterned with a dose of 38mJ/cm2, giving a LER of 3.7 nm. Performance across multiple process conditions are discussed. We performed etch rate measurement and the multi-trigger resist showed etch resistance equivalent or better than standard chemically amplified resist. This could compensate for the lower film thickness required to avoid pattern collapse at pitch 32nm.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yannick Vesters, Yannick Vesters, Alexandra McClelland, Alexandra McClelland, Danilo De Simone, Danilo De Simone, Carmen Popescu, Carmen Popescu, Guy Dawson, Guy Dawson, John Roth, John Roth, Wolfgang Theis, Wolfgang Theis, Geert Vandenberghe, Geert Vandenberghe, Alex P. G. Robinson, Alex P. G. Robinson, } "Multi-trigger resist patterning with ASML NXE3300 EUV scanner", Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 1058308 (19 March 2018); doi: 10.1117/12.2297402; https://doi.org/10.1117/12.2297402

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