19 March 2018 Holistic analysis of aberration induced overlay error in EUV lithography
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Abstract
Although lens aberrations in EUV imaging systems are very small, aberration impacts on pattern placement error and overlay error need to be carefully investigated to obtain the most robust lithography process for high volume manufacturing. Instead of focusing entirely on pattern placement errors in the context of a single lithographic process, we holistically study the interaction between two sequential lithographic layers affected by evolving aberration wavefronts, calculate aberration induced overlay error, and explore new strategies to improve overlay.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yulu Chen, Yulu Chen, Lars Liebmann, Lars Liebmann, Lei Sun, Lei Sun, Allen Gabor, Allen Gabor, Shuo Zhao, Shuo Zhao, Feixiang Luo, Feixiang Luo, Obert Wood, Obert Wood, Xuemei Chen, Xuemei Chen, Daniel Schmidt, Daniel Schmidt, Michael Kling, Michael Kling, Francis Goodwin, Francis Goodwin, } "Holistic analysis of aberration induced overlay error in EUV lithography", Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105830D (19 March 2018); doi: 10.1117/12.2297027; https://doi.org/10.1117/12.2297027
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