19 March 2018 EUV for HVM: towards an industrialized scanner for HVM NXE3400B performance update
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Abstract
With the introduction of its fifth-generation NXE:3400B scanner, ASML brought EUV to High- Volume Manufacturing for 7 nm node lithography and beyond with full support of pellicle. This paper presents an update on lithographic performance results obtained with the NXE:3400B, characterized by an NA of 0.33, a Pupil Fill Ratio (PFR) of 0.2 and throughput capability of 125 wafers per hour. Advances in source power and system availability have enabled a continued increase of productivity. To maximize the number of yielding dies per day excellent Overlay, Focus, and Critical Dimension (CD) control have been realized, combining intrinsic tool stability with holistic control schemes. We will also show matching performance for both Overlay and Imaging, and further improvements in Focus Process Dependencies for the 5nm node.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roderik van Es, Roderik van Es, Mark van de Kerkhof, Mark van de Kerkhof, Arthur Minnaert, Arthur Minnaert, Geert Fisser, Geert Fisser, Jos de Klerk, Jos de Klerk, Joost Smits, Joost Smits, Roel Moors, Roel Moors, Eric Verhoeven, Eric Verhoeven, Leon Levasier, Leon Levasier, Rudy Peeters, Rudy Peeters, Marco Pieters, Marco Pieters, Hans Meiling, Hans Meiling, "EUV for HVM: towards an industrialized scanner for HVM NXE3400B performance update", Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105830H (19 March 2018); doi: 10.1117/12.2299503; https://doi.org/10.1117/12.2299503
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