We study stochastic responses for three technology nodes:
• An SRAM cell for 7 nm technology node, with Numerical Aperture = 0.33 and patterned with organic chemically amplified resist
• An SRAM cell for 5 nm technology node, with Numerical Aperture = 0.33 and patterned with:
o Organic chemically amplified resist
o Fast photospeed organic chemically amplified resist
o Metal-oxide resist
• An SRAM cell for 3 nm technology node, patterned with organic chemically amplified resist and:
o Numerical Aperture = 0.33 in single exposure
o Numerical Aperture = 0.33 with double exposure
o Numerical Aperture = 0.55 with anamorphic pupil
For each case, we optimize mask bias, source illumination and process conditions across focus to maximize the optical contrast. We did not apply optical proximity correction to the mask. The purpose of the work is to evaluate the stochastic behavior of different features as a function of material strategy, technology node, and lithographic approach.
