21 March 2018 Single exposure EUV of 32nm pitch logic structures: patterning performance on BF and DF masks
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Abstract
This paper summarizes findings for an N5 equivalent M2 (pitch 32) layer patterned by means of SE EUV. Different mask tonalities and resist tonalities have been explored and a full patterning (litho plus etch) process into a BEOL stack has been developed. Resolution enhancement techniques like SRAFs insertion and retargeting have been evaluated and compared to a baseline clip just after OPC. Steps forward have been done to develop a full patterning process using SE EUV, being stochastics and variability the main items to address.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. M. Blanco Carballo, V. M. Blanco Carballo, J. Bekaert, J. Bekaert, J. H. Franke, J. H. Franke, R. H. Kim, R. H. Kim, E. Hendrickx, E. Hendrickx, L. E. Tan, L. E. Tan, W. Gillijns, W. Gillijns, Y. Drissi, Y. Drissi, M. Mao, M. Mao, G. McIntyre, G. McIntyre, M. Dusa, M. Dusa, M. Kupers, M. Kupers, D. Rio, D. Rio, G. Schiffelers, G. Schiffelers, E. De Poortere, E. De Poortere, J. Jia, J. Jia, S. Hsu, S. Hsu, M. Demand, M. Demand, K. Nafus, K. Nafus, S. Biesemans, S. Biesemans, } "Single exposure EUV of 32nm pitch logic structures: patterning performance on BF and DF masks", Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105830L (21 March 2018); doi: 10.1117/12.2299639; https://doi.org/10.1117/12.2299639
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