DDR process could be achieved fine line and space patterning below hp14nm without any pattern collapse by combination of PTD or NTD photo resist.
DDR materials were demonstrated with latest coater track at imec. DDR process was fully automated and good CD uniformity was achieved after dry development. Detailed evaluation could be achieved with whole wafer such a study of CD uniformity (CDU). CDU of DDR pattern was compared to pre-pattern’s CDU. Lower CDU was achieved and CDU healing was observed with special DDR material. By further evaluation, special DDR material showed relatively small E-slope compared to another DDR material. This small E-slope caused CDU improvement.