1 May 2018 EUV contact-hole local CD uniformity optimization for DRAM storage node application
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Abstract
LCDU (Local Critical Dimension Uniformity) is one of the biggest challenges in EUV lithography as well as throughput. High contrast illumination, so called, leaf hexapole illumination is proposed for staggered contact-hole array pattern. Leaf hexapole illumination shows much better LCDU compared with traditional hexapole illumination which has been used in DUV lithography so far. Stochastic noise model[1] which was developed based on the particle nature of photon is updated to supplement a missing term. Model prediction is well matched with experimental results in wide range of wafer CD and mask CD. Further optimization of LCDU and/or dose-to-size can be predicted through mask CD optimization. By using illumination optimization and mask CD optimization technique, EUV single exposure process can be applied below D1z node or beyond.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mijung Lim, Mijung Lim, Chang-Moon Lim, Chang-Moon Lim, Chang-Nam Ahn, Chang-Nam Ahn, Daniel Park, Daniel Park, Anita Fumar-Pici, Anita Fumar-Pici, Nak Seong, Nak Seong, } "EUV contact-hole local CD uniformity optimization for DRAM storage node application", Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105830X (1 May 2018); doi: 10.1117/12.2299322; https://doi.org/10.1117/12.2299322
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