2 May 2018 Illumination source optimization in EUV lithography for staggered contact holes and pillars for DRAM applications
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Abstract
Illumination source optimization is a very fundamental task in wafer lithography. By optimizing the incidence angles at the reticle, the combined diffraction behavior of mask and projection optics can be modified. One of the most critical parameter to control in EUV lithography is contrast at best and through focus as this drives the stochastic effects. In this work, we will look at the illumination source optimization for staggered CH and pillars for DRAM applications driven by fundamental considerations at diffraction level.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jo Finders, Jo Finders, Ziyang Wang, Ziyang Wang, John McNamara, John McNamara, Gijsbert Rispens, Gijsbert Rispens, Pär Broman, Pär Broman, Chang-Nam Ahn, Chang-Nam Ahn, Inhwan Lee, Inhwan Lee, Hwan Kim, Hwan Kim, Junghyun Kang, Junghyun Kang, Yoonsuk Hyun, Yoonsuk Hyun, Chang-Moon Lim, Chang-Moon Lim, } "Illumination source optimization in EUV lithography for staggered contact holes and pillars for DRAM applications", Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105830Y (2 May 2018); doi: 10.1117/12.2299598; https://doi.org/10.1117/12.2299598
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