19 March 2018 High-power LPP-EUV source with long collector mirror lifetime for high volume semiconductor manufacturing
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Abstract
We have been developing CO2-Sn-LPP EUV light source which is the most promising solution as the 13.5nm high power light source for HVM EUVL. Unique and original technologies such as; combination of pulsed CO2 laser and Sn droplets, dual wavelength laser pulses shooting and mitigation with magnetic field have been developed in Gigaphoton Inc.. We have developed first practical source for HVM; “GL200E” 17) in 2014. We have proved high average power CO2 laser more than 20kW at output power cooperate with Mitsubishi electric cooperation16). Pilot#1 is up running and its demonstrates HVM capability; EUV power recorded at111W average (117W in burst stabilized, 95% duty) with 5% conversion efficiency for 22hours operation in October 201621). Recently we have demonstrated, EUV power recorded at113W in burst stabilized (85W in average, 75% duty), with 5% conversion efficiency during 143hours operation. Also the Pilot#1 system recorded 64% availability and idle time was 25%. Availability is potentially achievable at 89% (2weeks average), also superior magnetic mitigation has demonstrated promising mirror degradation rate (= -0.5%/Gp) above 100W level operation with dummy mirror test22) . Very low degradation (= - 0.4%/Gp) of actual collector mirror reflectance has been demonstrated above 100W level operation (in burst) with magnetic mitigation EUV source.
Conference Presentation
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Hakaru Mizoguchi, Hiroaki Nakarai, Tamatsu Abe, Krzysztof M. Nowak, Yasufumi Kawasuji, Hiroshi Tanaka, Yukio Watanabe, Tsukasa Hori, Takeshi Kodama, Yutaka Shiraishi, Tatsuya Yanagida, George Soumangne, Tsuyoshi Yamada, Taku Yamazaki, Takashi Saitou, "High-power LPP-EUV source with long collector mirror lifetime for high volume semiconductor manufacturing", Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 1058318 (19 March 2018); doi: 10.1117/12.2299300; https://doi.org/10.1117/12.2299300
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