19 March 2018 High-resolution EUV lithography using a multi-trigger resist
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Abstract
As minimum lithographic size continues to shrink, the development of techniques and resist materials capable of high resolution, high sensitivity and low line edge roughness (LER) have become increasingly important for next-generation lithography. In this study we present results where the behaviour of the resist is driven towards the multi-trigger regime by manipulating the resist formulation. We also present results obtained after enhancements of the base molecule to give high resolution, better LER, and a significant sensitivity enhancement of 40% over the standard material. Finally, we present the inclusion of non-metallic high-Z elements into the formulation to allow for a further reduction in LER at the same resolution and sensitivity as seen for the enhanced MTR molecule, indicating a direction for further improvements.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Popescu, C. Popescu, D. Kazazis, D. Kazazis, A. McClelland, A. McClelland, G. Dawson, G. Dawson, J. Roth, J. Roth, W. Theis, W. Theis, Y. Ekinci, Y. Ekinci, A. P. G. Robinson, A. P. G. Robinson, } "High-resolution EUV lithography using a multi-trigger resist", Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105831L (19 March 2018); doi: 10.1117/12.2297406; https://doi.org/10.1117/12.2297406
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