27 March 2018 Constructing a robust PSCAR process for EUV
Author Affiliations +
In order to lower the cost of ownership of EUV lithography, high sensitivity EUV resists , enabling higher throughput of EUV scanners are being explored. The concept that utilizes a Photosensitized Chemically Amplified ResistTM (PSCARTM) is a promising solution for achieving increased resist sensitivity, while maintaining other high performance characteristics of the material (i.e., resolution, line edge roughness (LER), exposure latitude). PSCAR uses a UV exposure after EUV exposure and selective absorption to meet these goals . Preliminary results have been discussed in previous papers 1-8.

PSCAR utilizes an area-selective photosensitization mechanism to generate more acid in the exposed areas during a UV exposure. PSCAR is an attempt to break the resolution, line-edge-roughness, and sensitivity trade-off (RLS trade-off) relationships that limit standard chemically amplified resists. The photosensitizer, which is generated in exposed area by a photoacid catalytic reaction, absorbs the UV exposure light selectively and generates additional acid in the exposed area only.

Material development and UV exposure uniformity are the key elements of PSCAR technology for semiconductor mass fabrication. This paper will review the approaches toward improvement of PSCAR resist process robustness. The chemistry’s EUV exposure cycle of learning results from experiments at imec will be discussed.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Carcasi, Michael Carcasi, Seiji Nagahara, Seiji Nagahara, Gosuke Shiraishi, Gosuke Shiraishi, Yukie Minekawa, Yukie Minekawa, Hiroyuki Ide, Hiroyuki Ide, Yoshihiro Kondo, Yoshihiro Kondo, Kosuke Yoshihara, Kosuke Yoshihara, Masaru Tomono, Masaru Tomono, Ryo Shimada, Ryo Shimada, Kazuhiro Takeshita, Kazuhiro Takeshita, Teruhiko Moriya, Teruhiko Moriya, Yuya Kamei, Yuya Kamei, Kathleen Nafus, Kathleen Nafus, Serge Biesemans, Serge Biesemans, Hideo Nakashima, Hideo Nakashima, Masafumi Hori, Masafumi Hori, Ken Maruyama, Ken Maruyama, Hisashi Nakagawa, Hisashi Nakagawa, Tomoki Nagai, Tomoki Nagai, Satoshi Dei, Satoshi Dei, Masayuki Miyake, Masayuki Miyake, Takehiko Naruoka, Takehiko Naruoka, Motoyuki Shima, Motoyuki Shima, Geert Vandenberghe, Geert Vandenberghe, Danilo De Simone, Danilo De Simone, Philippe Foubert, Philippe Foubert, John S. Petersen, John S. Petersen, Akihiro Oshima, Akihiro Oshima, Seiichi Tagawa, Seiichi Tagawa, } "Constructing a robust PSCAR process for EUV", Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105831M (27 March 2018); doi: 10.1117/12.2297370; https://doi.org/10.1117/12.2297370

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