19 March 2018 EUV metal oxide hybrid photoresists: ultra-small structures for high-resolution patterning
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Extreme ultraviolet (EUV) lithography, using 13.5 nm radiation, is considered one of the most prominent candidates for next generation lithography. The main challenge for EUV resists is to simultaneously satisfy resolution, LWR (line-width roughness) and sensitivity requirements according to the ITRS roadmap1. Over the past few years, our main effort has been to focus on ZrO2 and HfO2 nanoparticle-based photoresists. However, both Zr and Hf are relatively low EUV absorbing metals2, and integration of high EUV absorption elements is considered to be a more promising route to further improve lithographic performance under EUV radiation. Here, we demonstrate novel zinc oxide-based nanoparticle photoresists, possessing small particle size, good solubility in spin-coating solvents, good film-forming abilitie and patterning by incorporating a photo-acid generator or photo-radical generator.
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Hong Xu, Hong Xu, Kou Yang, Kou Yang, Kazunori Sakai, Kazunori Sakai, Vasiliki Kosma, Vasiliki Kosma, Kazuki Kasahara, Kazuki Kasahara, Emmanuel P. Giannelis, Emmanuel P. Giannelis, Christopher K. Ober, Christopher K. Ober, "EUV metal oxide hybrid photoresists: ultra-small structures for high-resolution patterning", Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105831P (19 March 2018); doi: 10.1117/12.2297266; https://doi.org/10.1117/12.2297266

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