20 March 2018 Ultimate patterning limits for EUV at 5nm node and beyond
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The 5nm technology node introduces more aggressive geometries than previous nodes. In this paper, we are introducing a comprehensive study to examine the pattering limits of EUV at 0.33NA. The study is divided into two main approaches: (A) Exploring pattering limits of Single Exposure EUV Cut/Block mask in Self-Aligned-Multi-Patterning (SAMP) process, and (B) Exploring the pattering limits of a Single Exposure EUV printing of metal Layers.

The printability of the resulted OPC masks is checked through a model based manufacturing flow for the two pattering approaches. The final manufactured patterns are quantified by Edge Placement Error (EPE), Process Variation Band (PVBand), soft/hard bridging and pinching, Image Log Slope (ILS) and Common Depth of Focus (CDOF)
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rehab Kotb Ali, Rehab Kotb Ali, Ahmed Hamed Fatehy, Ahmed Hamed Fatehy, Neal Lafferty, Neal Lafferty, James Word, James Word, "Ultimate patterning limits for EUV at 5nm node and beyond", Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 1058321 (20 March 2018); doi: 10.1117/12.2297412; https://doi.org/10.1117/12.2297412


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