Paper
22 March 2018 Thermomechanical changes of EUV mask and absorber dependency
Author Affiliations +
Abstract
Thermal and structural deformations of extreme ultraviolet lithography (EUVL) masks during the exposure process may become important issues as these masks are subject to rigorous image placement and flatness change. The reflective masks used for EUVL absorb energy during exposure, and the temperature of the mask rises as a result. This can cause thermomechanical deformation that can reduce the pattern quality. Therefore, it is necessary to predict and optimize the effect of energy transmitted from the extreme ultraviolet (EUV) light source and the resultant patterns of complex multilayer structured EUV masks. Our study shows that temperature accumulation and deformation of the EUV mask are dependent on the absorber structure.
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Chung-Hyun Ban, Sung-Gyu Lee, Eun-Sang Park, Jae-Hun Park, and Hye-Keun Oh "Thermomechanical changes of EUV mask and absorber dependency", Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 1058322 (22 March 2018); https://doi.org/10.1117/12.2299495
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KEYWORDS
Photomasks

Extreme ultraviolet

Extreme ultraviolet lithography

Finite element methods

Computer simulations

Multilayers

Image processing

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