Monte Carlo-based simulation technique is a standard method for statistical analysis and modelling of stochastic processes; such as noise in circuits, carrier transport and study of ion implantation/interaction/trajectory on materials for integrated circuits. Thus Monte Carlo ion trajectory simulation for MAPDST-co-ADSM resist formulation showed that the negligible (∼0.5%) target damage and recoil generation (atom displacement) of total energy delivered to the system (MAPDST-co-ADSM/Si) in novel HIBL exposure due to much larger stopping power of He+ ion and low proximity effect.
ACCESS THE FULL ARTICLE
Satinder K. Sharma, Pulikanti Guruprasad Reddy, Mohamad Ghulam Moinuddin, Subrata Ghosh, Chullikkattil P. Pradeep, Kenneth E. Gonsalves, "Helium ion active hybrid non-chemically amplified resist (n-CAR) for sub-10 nm patterning applications," Proc. SPIE 10584, Novel Patterning Technologies 2018, 1058409 (19 March 2018);