5 April 2018 Multi-beam mask writer MBM-1000
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Multi-beam mask writer MBM-1000 is developed for N5 semiconductor production. It is designed to accomplish high resolution with 10-nm beam and high throughput with 300-Gbps blanking aperture array (BAA) and inline real-time data path. It has better beam resolution than EBM-9500 and has higher throughput at shot count more than 500 Gshot/pass. To further improve patterning resolution, pixel level dose correction (PLDC) is implemented to MBM-1000. It performs dose contrast enhancement by dose modulation pixel by pixel. Correction efficiency of PLDC is evaluated for linearity correction by simulation with threshold dose model. It is concluded that PLDC corrects linearity efficiently even without extra dose modulation, and improves dose margin with additional dose modulation of 140%.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Matsumoto, Hiroshi Matsumoto, Hideo Inoue, Hideo Inoue, Hiroshi Yamashita, Hiroshi Yamashita, Takao Tamura, Takao Tamura, Kenji Ohtoshi, Kenji Ohtoshi, } "Multi-beam mask writer MBM-1000", Proc. SPIE 10584, Novel Patterning Technologies 2018, 105840H (5 April 2018); doi: 10.1117/12.2299885; https://doi.org/10.1117/12.2299885

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