Nanoimprint lithography, NIL, is gathering much attention as one of the most promising candidates for the next generation lithography for semiconductor. The advantages of NIL are simpler exposure system with no coat/dev track, single process step without SADP/SAQP, less design rule restriction, lower cost-of-ownership, compared with other lithography technologies.
NIL working templates are made by the replication of the EB written high quality master templates. Fabrication of high resolution master templates is one of the key items. Since NIL is 1:1 pattern transfer process, master templates have to have 4 times higher resolution compared with conventional photomasks. Another key is to maintain the quality of the master templates in replication process. NIL process is applied for the template replication and this imprint process determines most of the performance of the replicated templates.
Application of multi-beam mask writer, MBMW, to the NIL master template fabrication is very attractive. For a fine feature master template such as 1z nm node, shot count for writing with single beam tool will drastically increase and the writing time is estimated more than days. On the other hand, because of the parallel exposure principle, MBMW can write a master in a certain time for any feature size. In addition, MBMW is suitable for high resolution low sensitivity EB resist, which is evitable for fine feature master fabrication.
We applied MBMW for the fabrication of full-field master of 1z nm node. In this presentation, we will be discussing master template fabrication process with MBMW and the performance of the template. We will also discuss the replication process with a high resolution master.