19 March 2018 Performance of a nanoimprint mask replication system
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Abstract
Nanoimprint lithography manufacturing equipment utilizes a patterning technology that involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. The technology faithfully reproduces patterns with a higher resolution and greater uniformity compared to those produced by photolithography equipment. Additionally, as this technology does not require an array of widediameter lenses and the expensive light sources necessary for advanced photolithography equipment, NIL equipment achieves a simpler, more compact design, allowing for multiple units to be clustered together for increased productivity.

In this paper, we review the progress and status of the FPA-1100NR2 mask replication system and also discuss the methods used on wafer imprint systems to extend the life of a replica mask. Criteria that are crucial to the success of a replication platform include image placement (IP) accuracy and critical dimension uniformity (CDU). Data is presented on both of these subjects. With respect to image placement, an IP accuracy (after removing correctables) of 0.8nm in X, 1.0nm in Y has been demonstrated. Particle adders were studied by cycling the tool for more than 16000 times and measuring particle adders. Additionally, new methods, including on-tool wafer inspection and in-situ mask cleaning are being studied to further extend the replica mask life.
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Atsushi Kimura, Kohei Imoto, Chiaki Sato, Kiyohito Yamamoto, Hiroshi Inada, Mitsuru Hiura, Takehiko Iwanaga, Ali Aghili, Makoto Mizuno, Jin Choi, Chris Jones, "Performance of a nanoimprint mask replication system", Proc. SPIE 10584, Novel Patterning Technologies 2018, 105840Q (19 March 2018); doi: 10.1117/12.2299636; https://doi.org/10.1117/12.2299636
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