19 March 2018 Process development of a maskless N40 via level for security application with multi-beam lithography
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The maskless electron beam lithography system, based on massively parallel electron-beam writing strategy has the ability for low-cost production of truly unique individual chips in volume manufacturing, compatible with optical systems. Mapper Lithography has introduced the FLX-1200 platform installed at CEA-Leti. This paper will present fully process-integration stepwise developments to be compliant with the single via layer demanding targets based on dual damascene process:

The lithographic performances and etch transfer optimization were firstly evaluated on a layer stack representative of N40 CMOS technology by developing step-by-step approach:

- 1/ Trilayer lithography of via layer and partial etch into low-k development with VSB 50kV

- 2/ Litho/etch process of product wafer with VSB 50keV

- 3/ Trilayer lithography of via pattern and etch into low-k for FLX-1200 multi-beam 5kV

- 4/ last litho of via pattern on product wafer using FLX (no etch yet). In addition, the overlay and CDU capability of FLX-1200 are assessed for via 3, and the alignment to product wafer is tested.

Via patterning integration showing the up-to-date achievements is mature enough to start first customer demos for security application.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Isabelle Servin, Isabelle Servin, Patricia Pimenta-Barros, Patricia Pimenta-Barros, Arthur Bernadac, Arthur Bernadac, Jonathan Pradelles, Jonathan Pradelles, Allan Germain, Allan Germain, Yoann Blancquaert, Yoann Blancquaert, Philippe Essomba, Philippe Essomba, Stefan Landis, Stefan Landis, Gerard ten Berge, Gerard ten Berge, Marco Wieland, Marco Wieland, Philippe Brun, Philippe Brun, } "Process development of a maskless N40 via level for security application with multi-beam lithography", Proc. SPIE 10584, Novel Patterning Technologies 2018, 1058411 (19 March 2018); doi: 10.1117/12.2297162; https://doi.org/10.1117/12.2297162

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