19 March 2018 Model-based proximity effect correction for helium ion beam lithography
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Abstract
This work presents a model-based proximity effect correction method and investigates its potential for helium ion beam lithography (HIBL). This method iteratively modulates the shape of pattern by a feedback compensation mechanism until the simulated patterning fidelity satisfied specific constraints. A point spread function is utilized to account for all phenomena involved during the scattering events of incident ion beam particle in the resist. Patterning prediction for subsequent correction process is derived from the energy intensity distribution, as a result of convolution between the point spread function and the pattern, with an adequate threshold. The performance of this method for HIBL is examined through several designed patterns from 15- to 5-nm HP under certain process parameters, including acceleration voltage, resist thickness and sensitivity. Preliminary results show its effectiveness on improving the patterning fidelity of HIBL.
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Chien-Lin Lee, Chien-Lin Lee, Sheng-Wei Chien, Sheng-Wei Chien, Kuen-Yu Tsai, Kuen-Yu Tsai, } "Model-based proximity effect correction for helium ion beam lithography", Proc. SPIE 10584, Novel Patterning Technologies 2018, 105841C (19 March 2018); doi: 10.1117/12.2297691; https://doi.org/10.1117/12.2297691
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