19 March 2018 Mask lithographic performance investigation with computational Monte-Carlo method on advanced mask patterning
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Abstract
As semiconductor features shrink in dimension and pitch, the excessive control of critical-dimension uniformity (CDU) and pattern fidelity is essential for mask manufacturing using electron-beam lithography. Requirements of the electronbeam shot quality affected by shot unsteadiness become more important than before for the advanced mask patterning. Imperfect electron optical system, an inaccurate beam deflector, and imprecise mask stage control are mainly related to the shot unsteadiness including positioning and dose perturbations. This work extensively investigates impacts of variable shaped beam dose and positioning perturbations on local CDU using Monte Carlo simulation for various mask contrast enhancement approaches. In addition, the relationship between the mask lithographic performance and the shot count number correlated with mask writing time is intensively studied.
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Chun-Hung Liu, Chun-Hung Liu, Shih-Ming Chang, Shih-Ming Chang, Chia-Hua Chang, Chia-Hua Chang, Wen Lo, Wen Lo, Hsin-Wei Wu, Hsin-Wei Wu, Chien-Cheng Chen, Chien-Cheng Chen, Alex Chen, Alex Chen, Shuo-Yen Chou, Shuo-Yen Chou, Ru-Gun Liu, Ru-Gun Liu, } "Mask lithographic performance investigation with computational Monte-Carlo method on advanced mask patterning", Proc. SPIE 10584, Novel Patterning Technologies 2018, 105841E (19 March 2018); doi: 10.1117/12.2302685; https://doi.org/10.1117/12.2302685
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