21 March 2018 Material development for high-throughput nanoimprint lithography
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Abstract
Nanoimprint lithography (NIL) is a candidate of alternative lithographic technology for memory devices. We are developing NIL technology and challenging critical issues such as defectivity, overlay, and throughput . NIL material is a key factor to support the robust patterning process. Especially, resist material can play an important role in addressing the issue of the total throughput performance. The aim of this research is to clarify key factors of resist property which can reduce resist filling time and template separation time . The liquid resist is filled in the relief patterns on a quartz template surface and subsequently cured under UV radiation. The filling time is a bottleneck of NILthroughput. We have clarified that the air trapping in the liquid resist is critical. Based on theoretical study, we have identified key factors of NIL-resist property. These results have provided a deeper insight into resist material for high throughput NIL.
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Kei Kobayashi, Takayuki Nakamura, Hirokazu Kato, Masayuki Hatano, Hiroshi Tokue, Tetsuro Nakasugi, Eun Hyuk Choi, Wooyung Jung, Takuya Kono, "Material development for high-throughput nanoimprint lithography", Proc. SPIE 10584, Novel Patterning Technologies 2018, 105841F (21 March 2018); doi: 10.1117/12.2297307; https://doi.org/10.1117/12.2297307
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