Material development for high-throughput nanoimprint lithography

Kei Kobayashi; Takayuki Nakamura; Hirokazu Kato; Masayuki Hatano; Hiroshi Tokue; Tetsuro Nakasugi; Eun Hyuk Choi; Wooyung Jung; Takuya Kono

doi:10.1117/12.2297307

21 March 2018 Material development for high-throughput nanoimprint lithography

Kei Kobayashi; Takayuki Nakamura; Hirokazu Kato; Masayuki Hatano; Hiroshi Tokue; Tetsuro Nakasugi; Eun Hyuk Choi; Wooyung Jung; Takuya Kono

Author Affiliations +

Proceedings Volume 10584, Novel Patterning Technologies 2018; 105841F (2018) https://doi.org/10.1117/12.2297307
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

Nanoimprint lithography (NIL) is a candidate of alternative lithographic technology for memory devices. We are developing NIL technology and challenging critical issues such as defectivity, overlay, and throughput . NIL material is a key factor to support the robust patterning process. Especially, resist material can play an important role in addressing the issue of the total throughput performance. The aim of this research is to clarify key factors of resist property which can reduce resist filling time and template separation time . The liquid resist is filled in the relief patterns on a quartz template surface and subsequently cured under UV radiation. The filling time is a bottleneck of NILthroughput. We have clarified that the air trapping in the liquid resist is critical. Based on theoretical study, we have identified key factors of NIL-resist property. These results have provided a deeper insight into resist material for high throughput NIL.

Citation Download Citation

Kei Kobayashi, Kei Kobayashi, Takayuki Nakamura, Takayuki Nakamura, Hirokazu Kato, Hirokazu Kato, Masayuki Hatano, Masayuki Hatano, Hiroshi Tokue, Hiroshi Tokue, Tetsuro Nakasugi, Tetsuro Nakasugi, Eun Hyuk Choi, Eun Hyuk Choi, Wooyung Jung, Wooyung Jung, Takuya Kono, Takuya Kono, } "Material development for high-throughput nanoimprint lithography", Proc. SPIE 10584, Novel Patterning Technologies 2018, 105841F (21 March 2018); doi: 10.1117/12.2297307; https://doi.org/10.1117/12.2297307

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