Fabrication of optical nanodevices through field-emission scanning probe lithography and cryogenic etching

Cemal Aydogan; Martin Hofmann; Claudia Lenk; Burkhard Volland; Ivo W. Rangelow; Mahmut Bicer; B. Erdem Alaca; Onur Ates; Hamdi Torun; Arda D. Yalcinkaya

doi:10.1117/12.2305268

19 March 2018 Fabrication of optical nanodevices through field-emission scanning probe lithography and cryogenic etching

Cemal Aydogan, Martin Hofmann, Claudia Lenk, Burkhard Volland, Ivo W. Rangelow, Mahmut Bicer, B. Erdem Alaca, Onur Ates, Hamdi Torun, Arda D. Yalcinkaya

Author Affiliations +

Proceedings Volume 10584, Novel Patterning Technologies 2018; 105841G (2018) https://doi.org/10.1117/12.2305268
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

Sub-10 nanometer lithography is opening a new area for beyond-CMOS devices. Regarding to single nano-digit manufacturing we have established a new maskless patterning scheme by using field-emission, current controlled Scanning Probe Lithography (cc-SPL) in order to create optical nanodevices in thin silicon-on-insulator (SOI) substrates. This work aims to manufacture split ring resonators into calixarene resist by using SPL, while plasma etching at cryogenic temperatures is applied for an efficient pattern transfer into the underlying Si layer. Such electromagnetic resonators take the form of a ring with a narrow gap, whose 2D array was the first left-handed material tailored to demonstrate the so-called left-hand behavior of the wave propagation. It is shown that the resonance frequency can be tuned with the feature size of the resonator, and the resonance frequency can be shifted further into near infrared or even visible light regions.

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Cemal Aydogan, Martin Hofmann, Claudia Lenk, Burkhard Volland, Ivo W. Rangelow, Mahmut Bicer, B. Erdem Alaca, Onur Ates, Hamdi Torun, and Arda D. Yalcinkaya "Fabrication of optical nanodevices through field-emission scanning probe lithography and cryogenic etching", Proc. SPIE 10584, Novel Patterning Technologies 2018, 105841G (19 March 2018); https://doi.org/10.1117/12.2305268

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