13 March 2018 Unique method for controlling device level overlay with high-NA optical overlay technique using YieldStar in a DRAM HVM environment
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Abstract
This paper demonstrates the improvement using the YieldStar S-1250D small spot, high-NA, after-etch overlay in-device measurements in a DRAM HVM environment. It will be demonstrated that In-device metrology (IDM) captures after-etch device fingerprints more accurately compared to the industry-standard CDSEM. Also, IDM measurements (acquiring both CD and overlay) can be executed significantly faster increasing the wafer sampling density that is possible within a realistic metrology budget. The improvements to both speed and accuracy open the possibility of extended modeling and correction capabilities for control. The proof-book data of this paper shows a 36% improvement of device overlay after switching to control in a DRAM HVM environment using indevice metrology.
Conference Presentation
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Dong-Kiu Park, Dong-Kiu Park, Hyun-Sok Kim, Hyun-Sok Kim, Moo-Young Seo, Moo-Young Seo, Jae-Wuk Ju, Jae-Wuk Ju, Young-Sik Kim, Young-Sik Kim, Mir Shahrjerdy, Mir Shahrjerdy, Arno van Leest, Arno van Leest, Aileen Soco, Aileen Soco, Giacomo Miceli, Giacomo Miceli, Jennifer Massier, Jennifer Massier, Elliott McNamara, Elliott McNamara, Paul Hinnen, Paul Hinnen, Paul Böcker, Paul Böcker, Nang-Lyeom Oh, Nang-Lyeom Oh, Sang-Hoon Jung, Sang-Hoon Jung, Yvon Chai, Yvon Chai, Jun-Hyung Lee, Jun-Hyung Lee, "Unique method for controlling device level overlay with high-NA optical overlay technique using YieldStar in a DRAM HVM environment", Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 105850V (13 March 2018); doi: 10.1117/12.2297094; https://doi.org/10.1117/12.2297094
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