13 March 2018 Advanced combined overlay and CD uniformity measurement mark for double patterning
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Abstract
Advanced processing methods like multiple patterning necessitate improved intra-layer uniformity and balancing monitoring for overlay and CD. To achieve those requirements without major throughout impact, a new advanced mark for measurement is introduced. Based on an optical measurement, this mark delivers CD and overlay results for a specified layer at once. During the conducted experiments at front-end-of-line (FEOL) process area, a mark selection is done and the measurement capability of this mark design is verified. Gathered results are used to determine lithography to etch biases and intra-wafer signatures for CD and overlay. Furthermore, possible use cases like dose correction recipe creation and process signature monitoring were discussed.
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Hsiao Lin Hsu, Hsiao Lin Hsu, En Chuan Lio, En Chuan Lio, Charlie Chen, Charlie Chen, Jia Hung Chang, Jia Hung Chang, Sho Shen Lee, Sho Shen Lee, Stefan Buhl, Stefan Buhl, Manuela Gutsch, Manuela Gutsch, Patrick Lomtscher, Patrick Lomtscher, Martin Freitag, Martin Freitag, Boris Habets, Boris Habets, Rex Liu, Rex Liu, } "Advanced combined overlay and CD uniformity measurement mark for double patterning", Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 105851H (13 March 2018); doi: 10.1117/12.2299299; https://doi.org/10.1117/12.2299299
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