13 March 2018 Holistic approach for overlay and edge placement error to meet the 5nm technology node requirements
Author Affiliations +
In this paper, we discuss the metrology methods and error budget that describe the edge placement error (EPE). EPE quantifies the pattern fidelity of a device structure made in a multi-patterning scheme. Here the pattern is the result of a sequence of lithography and etching steps, and consequently the contour of the final pattern contains error sources of the different process steps. EPE is computed by combining optical and ebeam metrology data. We show that high NA optical scatterometer can be used to densely measure in device CD and overlay errors. Large field e-beam system enables massive CD metrology which is used to characterize the local CD error. Local CD distribution needs to be characterized beyond 6 sigma, and requires high throughput e-beam system. We present in this paper the first images of a multi-beam e-beam inspection system. We discuss our holistic patterning optimization approach to understand and minimize the EPE of the final pattern. As a use case, we evaluated a 5-nm logic patterning process based on Self-Aligned-QuadruplePatterning (SAQP) using ArF lithography, combined with line cut exposures using EUV lithography.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan Mulkens, Jan Mulkens, Bram Slachter, Bram Slachter, Michael Kubis, Michael Kubis, Wim Tel, Wim Tel, Paul Hinnen, Paul Hinnen, Mark Maslow, Mark Maslow, Harm Dillen, Harm Dillen, Eric Ma, Eric Ma, Kevin Chou, Kevin Chou, Xuedong Liu, Xuedong Liu, Weiming Ren, Weiming Ren, Xuerang Hu, Xuerang Hu, Fei Wang, Fei Wang, Kevin Liu, Kevin Liu, } "Holistic approach for overlay and edge placement error to meet the 5nm technology node requirements", Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 105851L (13 March 2018); doi: 10.1117/12.2297283; https://doi.org/10.1117/12.2297283

Back to Top