13 March 2018 Study on the dark-field illumination for near-field microscope using anamorphic optics to inspect defects on semiconductor wafers
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Abstract
General approaches to realize higher sensitivity in optical inspection system are using shorter wavelength including UV and higher NA for objective lens. Extreme performances of imaging and illumination systems in a situation of wellmatched to each other are inevitable for the further effort on an effective optical detection of fine defects in patterned wafer. This study focused on the dark-field illumination method in near-field condition with simple modification of far-field imaging and illumination system which is designed by anamorphic optics and the potential of it is derived from experimental methods.
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Woojun Han, Woojun Han, Sunseok Yang, Sunseok Yang, Hangyeong Oh, Hangyeong Oh, Yoongi Lee, Yoongi Lee, Jaisoon Kim, Jaisoon Kim, } "Study on the dark-field illumination for near-field microscope using anamorphic optics to inspect defects on semiconductor wafers", Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 1058520 (13 March 2018); doi: 10.1117/12.2297506; https://doi.org/10.1117/12.2297506
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