13 March 2018 Advanced technique for ultra-thin residue inspection with sub-10nm thickness using high-energy back-scattered electrons
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Abstract
Recently the aspect ratio of capacitor and via hole of memory semiconductor device has been dramatically increasing in order to store more information in a limited area. A small amount of remained residues after etch process on the bottom of the high aspect ratio structure can make a critical failure in device operation. Back-scattered electrons (BSE) are mainly used for inspecting the defect located at the bottom of the high aspect ratio structure or analyzing the overlay of the multi-layer structure because these electrons have a high linearity with the direction of emission and a high kinetic energy above 50eV. However, there is a limitation on that it cannot detect ultra-thin residue material having a thickness of several nanometers because the surface sensitivity is extremely low. We studied the characteristics of BSE spectra using Monte Carlo simulations for several cases which the high aspect ratio structures have extreme microscopic residues. Based on the assumption that most of the electrons emitted without energy loss are localized on the surface, we selected the detection energy window which has a range of 20eV below the maximum energy of the BSE. This window section is named as the high-energy BSE region. As a result of comparing the detection sensitivity of the conventional and the high-energy BSE detection mode, we found that the detection sensitivity for the residuals which have 2nm thickness is improved by more than 10 times in the high-energy BSE mode. This BSE technology is a new inspection method that can greatly be improved the inspection sensitivity for the ultra-thin residual material presented in the high aspect ratio structure, and its application will be expanded.
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Jin-Hee Han, Jin-Hee Han, } "Advanced technique for ultra-thin residue inspection with sub-10nm thickness using high-energy back-scattered electrons", Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 1058521 (13 March 2018); doi: 10.1117/12.2296982; https://doi.org/10.1117/12.2296982
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