13 March 2018 How to measure a-few-nanometer-small LER occurring in EUV lithography processed feature
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Abstract
For EUV lithography features we want to decrease the dose and/or energy of CD-SEM’s probe beam because LER decreases with severe resist-material’s shrink. Under such conditions, however, measured LER increases from true LER, due to LER bias that is fake LER caused by random noise in SEM image. A gap error occurs between the right and the left LERs. In this work we propose new procedures to obtain true LER by excluding the LER bias from the measured LER. To verify it we propose a LER’s reference-metrology using TEM.
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Hiroki Kawada, Hiroki Kawada, Takahiro Kawasaki, Takahiro Kawasaki, Junichi Kakuta, Junichi Kakuta, Masami Ikota, Masami Ikota, Tsuyoshi Kondo, Tsuyoshi Kondo, } "How to measure a-few-nanometer-small LER occurring in EUV lithography processed feature", Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 1058526 (13 March 2018); doi: 10.1117/12.2299969; https://doi.org/10.1117/12.2299969
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