13 March 2018 Geometry-based across wafer process control in a dual damascene scenario
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Abstract
Dual damascene is an established patterning process for back-end-of-line to generate copper interconnects and lines. One of the critical output parameters is the electrical resistance of the metal lines. In our 200 mm line, this is currently being controlled by a feed-forward control from the etch process to the final step in the CMP process. In this paper, we investigate the impact of alternative feed-forward control using a calibrated physical model that estimates the impact on electrical resistance of the metal lines* . This is done by simulation on a large set of wafers. Three different approaches are evaluated, one of which uses different feed-forward settings for different radial zones in the CMP process.
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Gerd Krause, Gerd Krause, Detlef Hofmann, Detlef Hofmann, Boris Habets, Boris Habets, Stefan Buhl, Stefan Buhl, Manuela Gutsch, Manuela Gutsch, Alberto Lopez-Gomez, Alberto Lopez-Gomez, Xaver Thrun, Xaver Thrun, } "Geometry-based across wafer process control in a dual damascene scenario", Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 105852C (13 March 2018); doi: 10.1117/12.2302972; https://doi.org/10.1117/12.2302972
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